The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 08, 2025

Filed:

Sep. 08, 2022
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventors:

Toshiaki Komukai, Yokkaichi, JP;

Motofumi Komori, Yokkaichi, JP;

Assignee:

Kioxia Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H10B 41/50 (2023.01);
U.S. Cl.
CPC ...
H01L 21/76802 (2013.01); H10B 41/50 (2023.02);
Abstract

A method of manufacturing a semiconductor device includes applying a resin on a first surface of a first layer, the first layer comprising a first hole having a first depth and a second hole having a second depth, forming a pattern on the resin, the pattern comprising a convex part above the first hole a diameter of the convex part being smaller than a diameter of an opening of the first hole, forming a protecting layer exposing a part of the convex part, removing the resin in the first hole, the resin in the hole being connected with the convex part, and processing the first hole to form a third hole connecting with the first hole and having a third depth in the first layer below the first hole.


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Komukai, Toshiaki. (2025). Method of manufacturing semiconductor device and method of forming pattern (U.S. Patent No. 12354906). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12354906

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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