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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12354899 B1

PDFFull Text
Date of Patent:
Jul. 08, 2025

Filed:

Apr. 11, 2023

Semiconductor devices and methods of manufacturing the same

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Taeyong Kwon, Suwon-si, KR;

Yoonjoong Kim, Suwon-si, KR;

Youngjin Yang, Suwon-si, KR;

Dain Jang, Suwon-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;

Attorney:

Sughrue Mion, PLLC

Primary Examiner:

Ajay Ojha

Assistant Examiner:

Sandra Milena Rodriguez Villanu

Int. Cl.
CPC ...
H01L 21/68 (2006.01); H01L 21/02 (2006.01); H01L 21/768 (2006.01); H01L 23/544 (2006.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01);
U.S. Cl.
CPC ...
H01L 21/68 (2013.01); H01L 21/02381 (2013.01); H01L 21/02576 (2013.01); H01L 21/02579 (2013.01); H01L 21/76816 (2013.01); H01L 23/544 (2013.01); H10D 84/016 (2025.01); H10D 84/038 (2025.01);
Abstract

A semiconductor device includes a substrate including a main chip region and a scribe lane region, wherein first trenches are formed in the scribe lane region. A well region doped with impurities is provided on an upper part of the main chip region of the substrate. Align key patterns formed on surfaces of the first trenches and on surfaces of the substrate adjacent to the first trenches in the scribe lane region and having an alternately and repeatedly stacked structure of a silicon germanium pattern and a silicon pattern, are provided. A multi-bridge channel transistor is formed on the main chip region of the substrate.

Find Patent Forward Citations

Kwon, Taeyong. (2025). Semiconductor devices and methods of manufacturing the same (U.S. Patent No. 12354899). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12354899

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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