The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2025
Filed:
Mar. 13, 2020
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventor:
Tomohiro Tamaki, Tokyo, JP;
Assignee:
MITSUBISHI ELECTRIC CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 62/53 (2025.01); H01L 21/30 (2006.01); H10D 12/00 (2025.01); H10D 30/66 (2025.01);
U.S. Cl.
CPC ...
H01L 21/3003 (2013.01); H10D 62/53 (2025.01); H10D 12/441 (2025.01); H10D 30/66 (2025.01);
Abstract
A semiconductor device is formed using a semiconductor substrate having a first main surface and a second main surface. A first semiconductor region of a first conductivity type is formed between the first main surface and the second main surface of the semiconductor substrate. A second semiconductor region is formed between the first semiconductor region and the first main surface. The first semiconductor region includes a hydrogen-related donor, and a concentration of the hydrogen-related donor of the first semiconductor region is equal to or larger than an impurity concentration of the first semiconductor region.