The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 08, 2025

Filed:

Jun. 21, 2021
Applicant:

Asm Ip Holding B.v., Almere, NL;

Inventors:

Bhushan Zope, Phoenix, AZ (US);

Eric Christopher Stevens, Tempe, AZ (US);

Shankar Swaminathan, Phoenix, AZ (US);

Eric James Shero, Phoenix, AZ (US);

Robert Brennan Milligan, Phoenix, AZ (US);

Assignee:

ASM IP Holding B.V., Almere, NL;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/285 (2006.01); C23C 16/08 (2006.01); C23C 16/455 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28568 (2013.01); C23C 16/08 (2013.01); C23C 16/45553 (2013.01); H01L 21/28556 (2013.01); H01L 21/76843 (2013.01);
Abstract

Vapor deposition processes for forming thin films comprising molybdenum on a substrate are provide. In some embodiments the processes comprise a plurality of deposition cycles in which the substrate is separately contacted with a vapor phase molybdenum precursor comprising a molybdenum halide, a first reactant comprising CO, and a second reactant comprising H. In some embodiments the thin film comprises MoC, MoC, or MoOC. In some embodiments the substrate is additionally contacted with a nitrogen reactant and a thin film comprising molybdenum, carbon and nitrogen is deposited, such as MoCN or MoOCN.


Find Patent Forward Citations

Loading…