The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2025
Filed:
Apr. 28, 2023
Applicant:
Asm Ip Holding B.v., Almere, NL;
Inventors:
Tom Blomberg, Vantaa, FI;
Chiyu Zhu, Helsinki, FI;
Assignee:
ASM IP Holding B.V., Almere, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01); H01L 21/28 (2025.01);
U.S. Cl.
CPC ...
H01L 21/02565 (2013.01); C23C 16/401 (2013.01); C23C 16/407 (2013.01); C23C 16/45523 (2013.01); C23C 16/45527 (2013.01); H01L 21/0228 (2013.01); H01L 21/0257 (2013.01); H01L 21/0262 (2013.01); H01L 21/28194 (2013.01); H01L 21/02592 (2013.01);
Abstract
Methods for forming a doped metal oxide film on a substrate by cyclical deposition are provided. In some embodiments, methods may include contacting the substrate with a first reactant comprising a metal halide source, contacting the substrate with a second reactant comprising a hydrogenated source and contacting the substrate with a third reactant comprising an oxide source. In some embodiments, related semiconductor device structures may include a doped metal oxide film formed by cyclical deposition processes.