The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2025
Filed:
Nov. 02, 2023
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Po-Yuan Tang, Hsinchu, TW;
Chih-Chuan Ke, New Taipei, TW;
Jian-Yuan Hsiao, Hsinchu, TW;
Yi-Ling Hung, Taoyuan, TW;
VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION, Hsinchu, TW;
Abstract
A sensing amplifier circuit includes first and second P-type transistors and first and second N-type transistors. The first P-type transistor includes a gate coupled to an input node, a source and a bulk coupled to a first node, and a drain coupled to an output node. The second P-type transistor includes a gate coupled to an inverted reading-triggered signal, a source coupled to a voltage source, and a drain coupled to the first node. The first N-type transistor includes a gate coupled to the input node, a drain coupled to the output node, and a source coupled to ground. The second N-type transistor includes a gate receiving the inverted reading-triggered signal, a drain coupled to the output node, and a source coupled to the ground. The first P-type transistor includes an N-type well region that is electrically connected to the source and bulk of the first P-type transistor.