The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2025
Filed:
Mar. 16, 2023
Kioxia Corporation, Tokyo, JP;
Takafumi Masuda, Kawasaki Kanagawa, JP;
Mutsumi Okajima, Yokkaichi Mie, JP;
Nobuyoshi Saito, Tokyo, JP;
Keiji Ikeda, Kawasaki Kanagawa, JP;
Kioxia Corporation, Tokyo, JP;
Abstract
A semiconductor memory device comprises: memory layers arranged in a first direction; and a first wiring extending in the first direction. The memory layers each comprise: a memory portion; a transistor; and a second wiring. The transistor comprises: a semiconductor layer electrically connected between the memory portion and the first wiring; a gate electrode facing the semiconductor layer and electrically connected to the second wiring; and a gate insulating film provided between the semiconductor layer and the gate electrode. The semiconductor layer faces surfaces of the gate electrode on one side and the other side in the first direction. In a cross section perpendicular to the first direction and including a part of the transistor corresponding to one of the memory layers, the first wiring comprises: a first surface in contact with the transistor; and a second surface not in contact with the transistor.