The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 08, 2025

Filed:

Jun. 20, 2023
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventor:

Hiroki Date, Chigasaki Kanagawa, JP;

Assignee:

Kioxia Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/30 (2006.01); G11C 16/08 (2006.01); G11C 16/26 (2006.01); G11C 16/34 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3436 (2013.01); G11C 16/08 (2013.01); G11C 16/26 (2013.01);
Abstract

In one embodiment, a semiconductor storage device includes memory cell transistors, and a word line electrically connected to the memory cell transistors. The device further includes a voltage generator configured to generate a first voltage transferred to the word line, the voltage generator including a voltage divider configured to divide the first voltage with first and second resistance elements, the first or second resistance element being a variable resistance element that receives a first digital signal indicating a resistance value and is changeable to the resistance value. The device further includes a control unit configured to output the first digital signal, wherein the control unit outputs the first digital signal such that a theoretical waveform of the first voltage in boosting the first voltage in an erasing verifying operation is different from a theoretical waveform of the first voltage in boosting the first voltage in a reading operation.


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