The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2025
Filed:
Jul. 31, 2023
Western Digital Technologies, Inc., San Jose, CA (US);
Quang Le, San Jose, CA (US);
Rohan Babu Nagabhirava, Virginia Beach, VA (US);
Xiaoyong Liu, San Jose, CA (US);
Brian R. York, San Jose, CA (US);
Cherngye Hwang, San Jose, CA (US);
Son T. Le, San Jose, CA (US);
Randy G. Simmons, San Jose, CA (US);
Kuok San Ho, Emerald Hills, CA (US);
Hisashi Takano, Fujisawa, JP;
Western Digital Technologies, Inc., San Jose, CA (US);
Abstract
The present disclosure generally relates to spin-orbit torque (SOT) devices comprising a bismuth antimony (BiSb) layer. The SOT devices further comprises a first shield, a BiSb layer disposed over the first shield (S), a free layer (FL) disposed over the BiSb layer, and a second shield (S) disposed over the FL. The S, the FL, and the Sare disposed at a media facing surface (MFS). The BiSb layer is recessed from the MFS a first distance of about 5 nm to about 20 nm. The FL has a length greater than the first distance. A notch and/or an insulation layer is disposed adjacent to the BiSb layer at the MFS. Current may be configured to flow vertically through the Sto the FL, and horizontally from the FL to the BiSb layer. Current may be configured to flow vertically through the Sto the S