The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2025
Filed:
Nov. 03, 2022
Applicant:
Powerchip Semiconductor Manufacturing Corporation, Hsinchu, TW;
Inventor:
Chun-Liang Lin, Hsinchu, TW;
Assignee:
Powerchip Semiconductor Manufacturing Corporation, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/36 (2012.01);
U.S. Cl.
CPC ...
G03F 1/36 (2013.01);
Abstract
A method for forming a photomask includes the following steps. A first target pattern is provided, wherein the first target pattern includes a first pattern area and a second pattern area. The first pattern area includes a block pattern. The second pattern area includes multiple stripe patterns. A first sidewall reset area is defined in the second pattern area. A retarget procedure is executed on the first target pattern to obtain a second target pattern. The photomask is formed based on the second target pattern.