The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2025
Filed:
Feb. 28, 2023
Beijing Boe Display Technology Co., Ltd., Beijing, CN;
Boe Technology Group Co., Ltd., Beijing, CN;
Pengtao Li, Beijing, CN;
Rui Han, Beijing, CN;
Peng Liu, Beijing, CN;
Chunhua Wang, Beijing, CN;
Xiaoqiao Dong, Beijing, CN;
Qi Fu, Beijing, CN;
Tiantian Liu, Beijing, CN;
Qiannan Pan, Beijing, CN;
Xiaoxia Wang, Beijing, CN;
Yang Wang, Beijing, CN;
Xiwang Xing, Beijing, CN;
Jie Yu, Beijing, CN;
Dong Cui, Beijing, CN;
Qing Ma, Beijing, CN;
Daekeun Yoon, Beijing, CN;
Site Cai, Beijing, CN;
Biqi Li, Beijing, CN;
BEIJING BOE DISPLAY TECHNOLOGY CO., LTD., Beijing, CN;
BOE TECHNOLOGY GROUP CO., LTD., Beijing, CN;
Abstract
An array substrate, a display device, and a drive-for-heating method for the display device. The array substrate includes: pixel units on a first base substrate; a data line on the first base substrate; a touch signal line on the first base substrate; a heating element on the first base substrate, and configured to generate heat under driving of a drive-for-heating current; a common electrode on the first base substrate and reused as a touch electrode; and a pixel electrode on the first base substrate. The thin film transistor includes an active layer in a semiconductor layer and a gate electrode in a first conductive layer. The data line is in a second conductive layer, one of the pixel electrode and the common electrode is in a third conductive layer, and a layer where the heating element is located is between the semiconductor layer and the third conductive layer.