The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2025
Filed:
Aug. 30, 2024
Applicant:
Tower Semiconductor Ltd., Migdal Haemek, IL;
Inventors:
Yakov Roizin, Afula, IL;
Avi Strum, Haifa, IL;
Assignee:
Tower Semiconductor Ltd., Migdal Haemek, IL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02B 6/35 (2006.01); G02B 6/136 (2006.01); G02B 6/12 (2006.01);
U.S. Cl.
CPC ...
G02B 6/136 (2013.01); G02B 6/3502 (2013.01); G02B 6/3546 (2013.01); G02B 2006/12061 (2013.01); G02B 2006/12145 (2013.01); G02B 2006/12176 (2013.01);
Abstract
A method for manufacturing an optical system, the method includes obtaining an intermediate semiconductor item that comprises a silicon substrate and a stack of layers that comprises a monocrystalline silicon layer and is positioned between two silicon alloy layers; wherein the silicon substrate comprises diffusion regions; and performing Complementary Metal-Oxide-Semiconductor (CMOS) compliant operations to provide, based on the intermediate semiconductor item, a first switching cell that is formed on the silicon substrate.