The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 08, 2025

Filed:

Jul. 22, 2021
Applicant:

Lyten, Inc., San Jose, CA (US);

Inventors:

Sung H. Lim, Mountain View, CA (US);

Eric Lewis Danielson, Santa Clara, CA (US);

Maurizio Tarsia, San Carlos, CA (US);

Gary Robert Larsen, San Jose, CA (US);

Assignee:

Lyten, Inc., San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 27/414 (2006.01); H10K 85/00 (2023.01);
U.S. Cl.
CPC ...
G01N 27/4145 (2013.01); H10K 85/761 (2023.02);
Abstract

A biological field-effect transistor (BioFET) includes source and drain regions formed in a substrate, an insulating layer disposed on a surface of the substrate, a gate disposed on the insulating layer and extending between the source and drain regions, a well region containing an electrolyte solution configured to retain an analyte, a three-dimensional (3D) graphene layer forming a channel region in the substrate, and a passivation layer. The graphene layer is biofunctionalized with a molecular recognition element configured to alter one or more electrical properties of the 3D graphene layer in response to exposure of the molecular recognition element to the analyte. The passivation layer is configured to prevent the electrolyte solution from contacting the source and drain. In some aspects, the 3D graphene layer is produced from carbon-containing inks. In other aspects, the 3D graphene layer includes a convoluted 3D structure configured to prevent graphene restacking.


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