The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2025
Filed:
Nov. 25, 2021
Huizhou China Star Optoelectronics Display Co., Ltd., Huizhou, CN;
Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd., Shenzhen, CN;
Lixuan Chen, Huizhou, CN;
Weiran Cao, Huizhou, CN;
Abstract
The present application provides a manufacturing method of a transistor, including: providing a substrate, a solution, an active layer material and an auxiliary electrode; the active layer material is dispersed in the solution, and the active layer material is charged; positioning the auxiliary electrode on one side of the substrate; positioning the solution between the auxiliary electrode and the gate insulating layer; and electrifying the gate and the auxiliary electrode; an electrical property of the gate is opposite to an electrical property of the active layer material, and the active layer material is deposited on the gate insulating layer under an action of the electric field to form a source layer.