The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 01, 2025

Filed:

Nov. 20, 2020
Applicants:

Mianyang Boe Optoelectronics Technology Co., Ltd., Sichuan, CN;

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Xin Cao, Beijing, CN;

Yawei Zhu, Beijing, CN;

Heungsik Kim, Beijing, CN;

Zifeng Wang, Beijing, CN;

Haoyuan Fan, Beijing, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10K 59/121 (2023.01); H10D 30/01 (2025.01); H10D 30/67 (2025.01); H10K 59/179 (2023.01); H10K 59/80 (2023.01);
U.S. Cl.
CPC ...
H10K 59/1213 (2023.02); H10D 30/0321 (2025.01); H10D 30/6723 (2025.01); H10D 30/6729 (2025.01); H10D 30/6745 (2025.01); H10D 30/6755 (2025.01); H10K 59/1216 (2023.02); H10K 59/1795 (2023.02); H10K 59/8731 (2023.02); H10K 59/8792 (2023.02);
Abstract

The present disclosure provides a display substrate, a manufacturing method thereof and a display apparatus. The display substrate includes a base substrate, an active structure layer disposed on the base substrate and a source-drain structure layer disposed on the active structure layer. The active structure layer includes a first active layer and a second active layer. A material of the first active layer includes low-temperature polysilicon and a material of the second active layer includes oxide semiconductors. The source-drain structure layer includes a first source-drain electrode and a second source-drain electrode, wherein the first source-drain electrode overlaps with a first side surface of the first active layer through a first via hole and the second source-drain electrode overlaps with a second side surface of the second active layer through a second via hole.


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