The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 01, 2025

Filed:

Oct. 31, 2019
Applicant:

Sharp Kabushiki Kaisha, Sakai, JP;

Inventors:

Yasushi Asaoka, Sakai, JP;

Kanako Nakata, Sakai, JP;

Tatsuya Ryohwa, Sakai, JP;

Makoto Izumi, Sakai, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10K 50/135 (2023.01); H10H 20/01 (2025.01); H10H 20/831 (2025.01); H10H 20/851 (2025.01); H10H 29/14 (2025.01); H10K 59/80 (2023.01);
U.S. Cl.
CPC ...
H10K 50/135 (2023.02); H10H 20/01 (2025.01); H10H 20/831 (2025.01); H10H 20/8514 (2025.01); H10H 29/142 (2025.01); H10K 59/80515 (2023.02); H10K 59/80521 (2023.02); H10K 59/878 (2023.02); H10H 20/032 (2025.01);
Abstract

A light-emitting element contains negative ions and positive ions, and includes a solid ionic layer, a layer containing quantum dots, and a cathode electrode and an anode electrode. The ionic layer includes a p-type doped region on the anode electrode side containing the negative ions in a higher quantity than the positive ions, an n-type doped region on the cathode electrode side containing the positive ions in a higher quantity than the negative ions, and a junction region between the p-type doped region and the n-type doped region. The layer containing the quantum dots is adjacent to the junction region. Alternatively, the quantum dots are contained in the junction region. Alternatively, the quantum dots are adjacent to the junction region.


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