The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 01, 2025

Filed:

Feb. 09, 2021
Applicant:

Plessey Semiconductors Ltd, Plymouth, GB;

Inventors:

Samir Mezouari, Plymouth, GB;

Andrea Pinos, Plymouth, GB;

Assignee:

Plessey Semiconductors Ltd, Plymouth Devon, GB;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/38 (2010.01); H10H 20/01 (2025.01); H10H 20/812 (2025.01); H10H 20/825 (2025.01); H10H 20/831 (2025.01); H10H 20/841 (2025.01);
U.S. Cl.
CPC ...
H10H 20/8312 (2025.01); H10H 20/018 (2025.01); H10H 20/812 (2025.01); H10H 20/825 (2025.01); H10H 20/841 (2025.01); H10H 20/032 (2025.01); H10H 20/034 (2025.01);
Abstract

A method of forming a light emitting structure, the light emitting structure comprising: a first light emitting region configured to emit light having a first primary peak wavelength; a second light emitting region configured to emit light having a second primary peak wavelength, wherein the first primary peak wavelength is different to the second primary peak wavelength; and a partially reflective layer positioned at least partially between the first light emitting region and the second light emitting region, wherein the partially reflective layer is configured to reflect light having the first primary peak wavelength emitted by the first light emitting region and allow light having the second primary peak wavelength emitted by the second light emitting region to pass through the partially reflective layer.


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