The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2025
Filed:
Oct. 26, 2021
Applicant:
Nikkiso Co., Ltd., Tokyo, JP;
Inventors:
Yusuke Matsukura, Ishikawa, JP;
Cyril Pernot, Ishikawa, JP;
Assignee:
Nikkiso Co., Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10H 20/825 (2025.01); H10H 20/01 (2025.01); H10H 20/816 (2025.01);
U.S. Cl.
CPC ...
H10H 20/8252 (2025.01); H10H 20/0137 (2025.01); H10H 20/8162 (2025.01);
Abstract
A nitride semiconductor light-emitting element includes an n-type semiconductor layer, a p-type semiconductor layer, an active layer provided between the n-type semiconductor layer and the p-type semiconductor layer, and an electron blocking layer comprising Al and being provided between the active layer and the p-type semiconductor layer. The electron blocking layer partially includes a high Al composition portion in at least one cross section orthogonal to a stacking direction, the high Al composition portion having an Al composition ratio higher than a surrounding portion.