The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2025
Filed:
Jul. 10, 2024
Trina Solar Co., Ltd., Changzhou, CN;
TRINA SOLAR CO., LTD., Changzhou, CN;
Abstract
A solar cell and a manufacturing method thereof, a photovoltaic module, and a photovoltaic system. The manufacturing method includes: providing a substrate; and dividing a second surface of the substrate into a first region, a second region, and an isolation region; sequentially stacking a first tunnel oxide layer, a first intrinsic amorphous silicon layer, a second tunnel oxide layer, and a second intrinsic amorphous silicon layer on the second surface of the substrate; removing the second intrinsic amorphous silicon layer and the second tunnel oxide layer located in the second region; doping the first intrinsic amorphous silicon layer and the second intrinsic amorphous silicon layer located in the first region with a first element, to obtain a first doped layer and a second doped layer respectively; doping the first intrinsic amorphous silicon layer located in the second region with a second element, to obtain a third doped layer; and forming an isolation structure in the isolation region, to isolate the first tunnel oxide layer located in the first region from the first tunnel oxide layer located in the second region and isolate the first doped layer and the second doped layer located in the first region from the third doped layer located in the second region.