The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2025
Filed:
Dec. 29, 2021
Fuji Electric Co., Ltd., Kawasaki, JP;
Shingo Hayashi, Matsumoto, JP;
FUJI ELECTRIC CO., LTD., Kawasaki, JP;
Abstract
A silicon carbide semiconductor device includes a silicon carbide semiconductor substrate of a first conductivity type, a first semiconductor layer of the first conductivity type, a second semiconductor layer of the first conductivity type, a third semiconductor layer of the first conductivity type, a fourth semiconductor layer of a second conductivity type, first semiconductor regions of the first conductivity type, gate insulating films, gate electrodes, a first electrode, and a second electrode. When a current flows from the first electrode to the second electrode, a peak light emission intensity at a wavelength close to 390 nm is lower than a peak light emission intensity at a wavelength close to 500 nm.