The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2025
Filed:
Sep. 25, 2020
Sony Semiconductor Solutions Corporation, Kanagawa, JP;
Naohiko Kimizuka, Kanagawa, JP;
Sony Semiconductor Solutions Corporation, Kanagawa, JP;
Abstract
A semiconductor device, a semiconductor device manufacturing method, and an image capturing device capable of suppressing variations in transistor characteristics. The semiconductor device includes a semiconductor substrate, and a field effect transistor. The field effect transistor includes a semiconductor region having a channel, a gate electrode covering the semiconductor region, and a gate insulating film. The semiconductor region has a top face, and a first side face at one side of the top face in a gate width direction of the gate electrode. The gate electrode has a first part facing the top face over the gate insulating film, and a second part facing the first side face over the gate insulating film. A first end face of the first part and a second end face of the second part are flush at at least one end of the gate electrode in a gate length direction.