The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 01, 2025

Filed:

Mar. 24, 2024
Applicant:

Innolux Corporation, Miaoli County, TW;

Inventors:

Ming-Jou Tai, Miaoli County, TW;

Chia-Hao Tsai, Miaoli County, TW;

Yi-Shiuan Cherng, Miaoli County, TW;

Assignee:

Innolux Corporation, Miaoli County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 64/23 (2025.01); H10D 86/40 (2025.01);
U.S. Cl.
CPC ...
H10D 64/258 (2025.01); H10D 86/441 (2025.01); H10D 86/451 (2025.01);
Abstract

An electronic device includes a substrate and a transistor disposed on the substrate. The transistor includes a semiconductor layer, a gate insulating layer, a gate electrode, a first electrode and a second electrode. The gate insulating layer has first contact holes and second contact holes. The first electrode and the second electrode are disposed on the gate electrode and respectively contact the semiconductor layer through the first contact holes and the second contact holes. A minimum distance between a first side of the first electrode and the gate electrode is less than a minimum distance between a first edge of one of the first contact holes and the gate electrode, and a minimum distance between a first side edge of the semiconductor layer and the gate electrode is less than a minimum distance between the first edge of the one of the first contact holes and the gate electrode.


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