Method of fabricating a semiconductor device including source/drain contacts having different heights and different widths

Abstract

A method for forming a semiconductor device includes: providing a substrate including a first and second region; forming a first gate dielectric pattern and a first gate electrode on the first region; forming a second gate dielectric pattern and a second gate electrode on the second region; forming an interlayer dielectric layer on the substrate; forming first source/drain contact holes penetrating the interlayer dielectric layer on the first region; and forming second source/drain contact holes penetrating the interlayer dielectric layer on the second region. A thickness of the second gate dielectric pattern is greater than a thickness of the first gate dielectric pattern. A height of each of the second source/drain contact holes is greater than a height of each of the first source/drain contact holes. A width of each of the second source/drain contact holes is greater than a width of each of the first source/drain contact holes.