The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2025
Filed:
Feb. 24, 2022
Toyota Jidosha Kabushiki Kaisha, Toyota, JP;
Katsunori Danno, Obu, JP;
TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota, JP;
Abstract
In a semiconductor device, p-type semiconductor layers are stacked on a first surface side of n-type gallium oxide semiconductor layer such that the p-type semiconductor layers are in contact with the n-type gallium oxide semiconductor layer; a first electrode layer is stacked on the first surface side of the n-type gallium oxide semiconductor layer such that the first electrode layer is in contact with the p-type semiconductor layers and is in contact with the n-type gallium oxide semiconductor layer in a portion where the p-type semiconductor layers are distant from each other; a second electrode layer is stacked on a second surface side of the n-type gallium oxide semiconductor layer such that the second electrode layer is in contact with the n-type gallium oxide semiconductor layer; and a shortest distance between two p-type semiconductor layers that are most adjacent to each other is 0.4 μm to 1.0 μm.