The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 01, 2025

Filed:

Mar. 15, 2022
Applicant:

Infineon Technologies Austria Ag, Villach, AT;

Inventors:

Hans Weber, Bayern, DE;

David Kammerlander, Villach, AT;

Andreas Riegler, Lichtpold, AT;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/66 (2025.01); H10D 64/00 (2025.01); H10D 64/27 (2025.01);
U.S. Cl.
CPC ...
H10D 30/668 (2025.01); H10D 64/112 (2025.01); H10D 64/514 (2025.01);
Abstract

A semiconductor device is proposed. An example of the semiconductor device includes a semiconductor body having a first main surface. A trench structure extends into the semiconductor body from the first main surface. The trench structure includes a trench electrode structure and a trench dielectric structure. The trench dielectric structure includes a gate dielectric in an upper part of the trench dielectric structure and a gap in a lower part of the trench dielectric structure. The semiconductor device further includes a body region adjoining the gate dielectric at a sidewall of the trench structure in the upper part of the trench dielectric structure. The gate dielectric extends deeper into the semiconductor body along the sidewall than the body region.


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