The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2025
Filed:
Oct. 08, 2021
Infineon Technologies Austria Ag, Villach, AT;
Lina Guo, Laguna Niguel, CA (US);
Oliver Blank, Villach, AT;
Timothy Henson, Mount Shasta, CA (US);
Laszlo Juhasz, Villach, AT;
Infineon Technologies Austria AG, Villach, AT;
Abstract
A semiconductor device is described. The semiconductor device includes: a semiconductor substrate having an edge, an active area spaced inward from the edge, and an edge termination area laterally surrounding the active area; and a plurality of transistor cells formed in the active area, each transistor cell including a source region of a first conductivity type and a body region of a second conductivity type opposite the first conductivity type. The edge termination area includes a plurality of needle-shaped compensation trenches and is devoid of complete transistor cells. A body doping region of the second conductivity type and that includes the body regions of the transistor cells extends from the active area into the edge termination area. The body doping region in the edge termination area is physically and electrically isolated from the body doping region in the active area.