The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2025
Filed:
Aug. 03, 2022
Applicant:
Infineon Technologies Austria Ag, Villach, AT;
Inventors:
Hyeongnam Kim, Chandler, AZ (US);
Mohamed Imam, Chandler, AZ (US);
Assignee:
Infineon Technologies Austria AG, Villach, AT;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/20 (2006.01); H10D 30/01 (2025.01); H10D 30/47 (2025.01); H10D 62/824 (2025.01); H10D 62/85 (2025.01); H10D 64/00 (2025.01);
U.S. Cl.
CPC ...
H10D 30/475 (2025.01); H10D 30/015 (2025.01); H10D 62/824 (2025.01); H10D 62/8503 (2025.01); H10D 64/111 (2025.01);
Abstract
The invention relates to a lateral field effect transistor, in particular a HEMT having a heterostructure, in a III/V semiconductor system with a p-type semiconductor being arranged between an ohmic load contact, in particular a drain contact, and a gate contact of the transistor for an injection of holes into a portion of the transistor channel. Further, a recombination zone implemented by a floating ohmic contact is provided for to improve the device performance.