The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 01, 2025

Filed:

Mar. 03, 2021
Applicant:

Guangdong Zhineng Technology Co., Ltd., Guangdong, CN;

Inventor:

Zilan Li, Guangzhou, CN;

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 30/47 (2025.01); H01L 21/02 (2006.01); H10D 30/01 (2025.01); H10D 62/824 (2025.01); H10D 62/85 (2025.01);
U.S. Cl.
CPC ...
H10D 30/475 (2025.01); H01L 21/02381 (2013.01); H01L 21/0243 (2013.01); H01L 21/02458 (2013.01); H01L 21/0254 (2013.01); H01L 21/02645 (2013.01); H10D 30/015 (2025.01); H10D 62/824 (2025.01); H10D 62/8503 (2025.01);
Abstract

The present disclosure provides a semiconductor device and a manufacturing method thereof. The semiconductor device includes a substrate, a groove formed on the substrate, a channel layer structure grown under restriction of the groove structure, the channel layer structure being exposed from an upper surface of the substrate; a barrier layer covering the exposed channel layer structure, a two-dimensional electron gas and a two-dimensional hole gas respectively formed on a second face and a first face of the channel layer structure, and a source, a gate, and a drain formed on the first face/second face of the channel layer structure, and a bottom electrode formed on the second face/first face of the channel layer structure.


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