The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2025
Filed:
Nov. 13, 2020
Applicant:
Sony Semiconductor Solutions Corporation, Kanagawa, JP;
Inventor:
Masashi Yanagita, Kanagawa, JP;
Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/20 (2006.01); H10D 30/01 (2025.01); H10D 30/47 (2025.01); H10D 62/13 (2025.01); H10D 62/824 (2025.01); H10D 62/85 (2025.01);
U.S. Cl.
CPC ...
H10D 30/47 (2025.01); H10D 30/015 (2025.01); H10D 62/151 (2025.01); H10D 62/824 (2025.01); H10D 62/8503 (2025.01);
Abstract
A semiconductor device includes a channel layer, a barrier layer, and at least one contact layer. The channel layer includes a GaN-based material. The barrier layer includes an AlInN-based material in which a composition ratio of In is higher than 18%, and is provided on the channel layer. The at least one contact layer includes a conductive-type semiconductor material and is provided to penetrate the barrier layer and reach the channel layer.