The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 01, 2025

Filed:

Mar. 08, 2024
Applicant:

Fuji Electric Co., Ltd., Kanagawa, JP;

Inventors:

Hiroshi Takishita, Matsumoto, JP;

Takashi Yoshimura, Matsumoto, JP;

Misaki Meguro, Matsumoto, JP;

Michio Nemoto, Matsumoto, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 12/00 (2025.01); H01L 21/265 (2006.01); H10D 62/10 (2025.01); H10D 62/60 (2025.01);
U.S. Cl.
CPC ...
H10D 12/481 (2025.01); H01L 21/26513 (2013.01); H10D 62/106 (2025.01); H10D 62/60 (2025.01);
Abstract

Provided is a semiconductor device including a semiconductor substrate having an upper surface, a lower surface, and a center position equidistant from the upper surface and the lower surface in a depth direction of the semiconductor substrate. One or more N-type regions with an N-type conductivity are provided in the semiconductor substrate such that at least one N-type region among the one or more N-type regions includes the center position of the semiconductor substrate. An entire portion of the semiconductor substrate includes a bulk-acceptor having a bulk-acceptor concentration. A carrier concentration in all of the one or more N-type regions is higher than the bulk-acceptor concentration.


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