The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 01, 2025

Filed:

Dec. 11, 2020
Applicant:

Commissariat À L'énergie Atomique ET Aux Énergies Alternatives, Paris, FR;

Inventor:

Anthonin Verdy, Grenoble, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 63/00 (2023.01); G11C 13/00 (2006.01); H10N 70/00 (2023.01); H10N 89/00 (2023.01);
U.S. Cl.
CPC ...
H10B 63/24 (2023.02); G11C 13/003 (2013.01); G11C 13/0069 (2013.01); H10N 70/063 (2023.02); H10N 89/00 (2023.02); G11C 2013/0083 (2013.01); G11C 2213/72 (2013.01); G11C 2213/76 (2013.01);
Abstract

An elementary cell includes a device and a non-volatile resistive memory mounted in a series, the device including an upper selector electrode, a lower selector electrode, a layer made up of a first active material, referred to as an active selecting layer, the device being intended to form a volatile selector; the memory including an upper memory electrode, a lower memory electrode, a layer made of at least a second active material, referred to as an active memory layer, the active selecting layer being in a conductive crystalline state and the memory being in a very strongly resistive state that is more resistive than the strongly resistive state of the memory.


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