The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2025
Filed:
Aug. 26, 2022
Kioxia Corporation, Tokyo, JP;
Tadayoshi Uechi, Kawasaki Kanagawa, JP;
Takeshi Shimane, Matsudo Chiba, JP;
Kioxia Corporation, Tokyo, JP;
Abstract
A semiconductor device has a third region between first and second regions on a substrate surface. A gate insulating film which is above the third region. A gate electrode is above the gate insulating film and includes a metal-containing layer. A first conductor is above the gate electrode. A first voltage can be applied to the first conductor. A second conductor is above the first region. A second voltage can be applied to the second conductor. A third conductor is above the first region. A third voltage different from the first and second can be applied to the third conductor. A metal oxide film is provided between the first region and the third conductor. An upper surface of the metal oxide film includes a portion at a height from the substrate that is lower than a height of an upper surface of the metal-containing layer.