Memory device, method of manufacturing memory device and method of operating memory device

Abstract

A memory device, and methods of manufacturing and operating the memory device, include alternately stacked interlayer insulating layers and conductive layers, a vertical hole configured to pass through the alternately stacked conductive layers and interlayer insulating layers, first blocking layers formed along the interlayer insulating layers exposed through the vertical hole, and second blocking layers formed along the conductive layers exposed through the vertical hole, with each second blocking layer having a thickness greater than that of each of the first blocking layers. The memory device also includes charge trap layers formed on the same layer as the interlayer insulating layers, and surrounded by the first and second blocking layers, a tunnel insulating layer formed along inner walls of the second blocking layers and the charge trap layers, and a channel layer formed along an inner wall of the tunnel insulating layer.