The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 01, 2025

Filed:

Aug. 21, 2023
Applicant:

Panasonic Intellectual Property Management Co., Ltd., Osaka, JP;

Inventors:

Yoshihiro Sato, Osaka, JP;

Takayuki Nishitani, Osaka, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04N 25/65 (2023.01); H04N 25/709 (2023.01); H04N 25/76 (2023.01); H04N 25/77 (2023.01); H10F 39/12 (2025.01); H10K 39/32 (2023.01);
U.S. Cl.
CPC ...
H04N 25/65 (2023.01); H04N 25/709 (2023.01); H04N 25/77 (2023.01); H10K 39/32 (2023.02);
Abstract

An imaging device includes a semiconductor substrate and a first transistor provided on the semiconductor substrate and including a first gate electrode, a source, and a drain. The semiconductor substrate includes a first well region of a second conductivity type, a second well region of a first conductivity type different from the second conductivity type, a first impurity region of the first conductivity type, the first impurity region being positioned in the first well region, being one of the source and the drain, holding charges generated by photoelectric conversion, and being electrically connected to the first gate electrode, and a second impurity region of the second conductivity type, the second impurity region being positioned in the second well region and electrically connected to the other of the source and the drain.


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