The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 01, 2025

Filed:

Jan. 20, 2023
Applicant:

Apple Inc., Cupertino, CA (US);

Inventors:

David M Signoff, Santa Clara, CA (US);

Fei Wang, Santa Clara, CA (US);

Kefei Wu, San Diego, CA (US);

Song Hu, San Jose, CA (US);

Morteza Nick, San Francisco, CA (US);

Xiang Guan, Santa Clara, CA (US);

Assignee:

Apple Inc., Cupertino, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02M 1/32 (2007.01); H02M 3/07 (2006.01);
U.S. Cl.
CPC ...
H02M 1/32 (2013.01); H02M 3/07 (2013.01);
Abstract

Radio frequency (RF) transmitters of a device (aggressor device) may unintentionally transmit a high-power output signal to antennas of a receiving device (victim device). In some RF systems, a victim device may have no or little protection between its antennas and transistors in an integrated circuit. Performance or lifetime of the transistors may be negatively impacted due to large voltage swings that may result from the high-power signal received from the aggressor device. To prevent or mitigate impact to performance or lifetime of the transistors due to the large voltage swings, protection circuitry including switches and a direct current (DC) power source (e.g., a charge pump) may be implemented at an input of a receiver of the victim device to shunt the power from sensitive circuit components of the victim device.


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