The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 01, 2025

Filed:

May. 24, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jimin Choi, Suwon-si, KR;

Jongmin Lee, Suwon-si, KR;

Yeonjin Lee, Suwon-si, KR;

Jeonil Lee, Suwon-si, KR;

Juik Lee, Suwon-si, KR;

Minjung Choi, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/00 (2006.01); H01L 25/065 (2023.01);
U.S. Cl.
CPC ...
H01L 23/481 (2013.01); H01L 24/05 (2013.01); H01L 25/0657 (2013.01); H01L 2224/0557 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06541 (2013.01);
Abstract

A semiconductor device includes a substrate, an etch stop layer on the substrate, a through-hole electrode extending through the substrate and the etch stop layer in a vertical direction substantially perpendicular to an upper surface of the substrate, and a conductive pad. The etch stop layer includes a first surface adjacent to the substrate and a second surface opposite the first surface. The through-hole electrode includes a protrusion portion that protrudes from the second surface of the etch stop layer. The conductive pad covers the protrusion portion of the through-hole electrode. The protrusion portion of the through-hole electrode is not flat.


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