The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2025
Filed:
Sep. 02, 2022
Applicant:
Semes Co., Ltd., Cheonan-si, KR;
Inventors:
Dong-Hun Kim, Seoul, KR;
Jae Hwan Kim, Gwangmyeong-si, KR;
Hye Joon Kheel, Hwaseong-si, KR;
Gun Woo Kim, Incheon, KR;
Tae Hyeon Jeon, Hwaseong-si, KR;
Assignee:
SEMES CO., LTD., Cheonan-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31116 (2013.01); H01J 37/3244 (2013.01); H01J 37/32724 (2013.01); H01J 37/32834 (2013.01); H01J 37/32422 (2013.01); H01J 2237/2007 (2013.01); H01J 2237/334 (2013.01);
Abstract
Provided is a substrate treating method of removing a thin film formed on a substrate. The substrate treating method includes a reaction process of transferring an etchant to the thin film, and a removal process of removing process by-products generated by reacting the thin film with the etchant, in which the reaction process and the removal process are repeated at least twice or more, and any one of the removal processes is to remove partially the process by-products.