The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 01, 2025

Filed:

Mar. 18, 2021
Applicant:

Tasmit, Inc., Yokohama, JP;

Inventors:

Naoya Saitoh, Yokohama, JP;

Daisuke Kubota, Yokohama, JP;

Assignee:

TASMIT, INC., Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/28 (2006.01); H01J 37/147 (2006.01); H01J 37/153 (2006.01); H01J 37/21 (2006.01); H01J 37/244 (2006.01); H01J 37/26 (2006.01);
U.S. Cl.
CPC ...
H01J 37/28 (2013.01); H01J 37/1474 (2013.01); H01J 37/153 (2013.01); H01J 37/21 (2013.01); H01J 37/244 (2013.01); H01J 37/265 (2013.01); H01J 2237/1534 (2013.01); H01J 2237/24475 (2013.01); H01J 2237/2448 (2013.01);
Abstract

The present invention relates to a scanning electron microscope configured to scan a workpiece, such as a wafer, mask, panel, or substrate, with an electron beam to generate an image of the workpiece. The scanning electron microscope includes a deflector () configured to deflect the electron beam to scan a target region (T) on the workpiece (W) with the electron beam, and a deflection controller () configured to apply to the deflectors () a scanning voltage that causes the electron beam to scan the target region (T) and an offset voltage that shifts the electron beam from an optical axial center (O) to the target region (T).


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