The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2025
Filed:
Mar. 16, 2023
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Energy Systems & Solutions Corporation, Kawasaki, JP;
Takeshi Gotanda, Yokohama Kanagawa, JP;
Tsuyoshi Asatani, Fujisawa Kanagawa, JP;
Yutaka Saita, Yokohama Kanagawa, JP;
Tomohiro Tobari, Yokohama Kanagawa, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Energy Systems & Solutions Corporation, Kawasaki, JP;
Abstract
A multilayer junction photoelectric converter and a multilayer junction photoelectric converter manufacturing method capable of preventing water from contacting a perovskite layer are provided. A multilayer junction photoelectric converter of an embodiment includes a multilayered-structure. In the multilayered-structure, a first electrode functional layer, a first photoactive layer, an intermediate functional layer, a second photoactive layer, and a second electrode functional layer are multilayered. The first photoactive layer is made of crystalline silicon. The second photoactive layer is made of a photoactive material having a perovskite crystal structure. A partial layer included in the second electrode functional layer is included in the multilayered-structure and extends on an edge surface of the multilayered-structure to cover an end portion of the second photoactive layer at the edge surface.