The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 01, 2025

Filed:

Dec. 05, 2023
Applicant:

Sharp Display Technology Corporation, Kameyama, JP;

Inventors:

Jun Nishimura, Kameyama, JP;

Yoshihito Hara, Kameyama, JP;

Masaki Maeda, Kameyama, JP;

Yoshiharu Hirata, Kameyama, JP;

Hideki Kitagawa, Kameyama, JP;

Masamitsu Yamanaka, Kameyama, JP;

Tohru Daitoh, Kameyama, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G09G 3/34 (2006.01); G11C 19/28 (2006.01);
U.S. Cl.
CPC ...
G09G 3/3446 (2013.01); G11C 19/28 (2013.01); G09G 2300/0426 (2013.01); G09G 2310/0267 (2013.01); G09G 2310/0286 (2013.01); G09G 2310/08 (2013.01);
Abstract

In each of unit circuits that constitute a shift register, a first conduction terminal of a second thin-film transistor that controls the output of an output signal serving as a scanning signal is given a second input clock signal having a amplitude larger than the amplitude of a first input clock signal that is given to a first conduction terminal of a first thin-film transistor that controls the output of an output signal serving as a control signal for controlling another unit circuit. The channel length of the second thin-film transistor is set to be greater than the channel length of the first thin-film transistor, so that the breakdown voltage of the second thin-film transistor is higher than the breakdown voltage of the first thin-film transistor.


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