Methods and electronic device for repairing memory element in memory device

Abstract

A method for repairing a memory element in a memory device by an electronic device includes configuring a memory element as a graph with a vertex and an edge, a node associated with the memory element being encoded with information related to a fault, determining, from the graph, a repair policy using a probability distribution over one or more of a faulty line and a non-faulty line as predicted by a graph neural network (GNN) based on a final node feature value from message passing stages of the GNN, and determining a value of a state using a probability of the memory element being repaired from a particular state based on a global mean of all the final node feature values predicted by the GNN.