The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2025
Filed:
Jul. 06, 2020
Applicant:
Soitec, Bernin, FR;
Inventors:
Mariam Sadaka, Austin, TX (US);
Ludovic Ecarnot, Grenoble, FR;
Assignee:
Soitec, Bernin, FR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B81C 1/00 (2006.01); B81B 1/00 (2006.01);
U.S. Cl.
CPC ...
B81C 1/00047 (2013.01); B81B 1/002 (2013.01); B81C 1/00158 (2013.01); B81B 2203/0127 (2013.01); B81B 2203/0315 (2013.01); B81C 2201/0105 (2013.01); B81C 2201/014 (2013.01); B81C 2201/0192 (2013.01); H01L 2221/1063 (2013.01); H01L 2224/03001 (2013.01);
Abstract
Methods of forming semiconductor structures comprising one or more cavities, which may be used in the formation of microelectromechanical system (MEMS) transducers, involve forming one or more cavities in a first substrate, providing a sacrificial material within the one or more cavities, bonding a second substrate over a surface of the first substrate, forming one or more apertures through a portion of the first substrate to the sacrificial material, and removing the sacrificial material from within the one or more cavities. Structures and devices are fabricated using such methods.