The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2025
Filed:
Oct. 18, 2018
Applicant:
Institute of Semiconductors, Chinese Academy of Sciences, Beijing, CN;
Inventors:
Lixia Zhao, Beijing, CN;
Jing Li, Beijing, CN;
Chao Yang, Beijing, CN;
Zhiguo Yu, Beijing, CN;
Xin Xi, Beijing, CN;
Kaiyou Wang, Beijing, CN;
Assignee:
INSTITUTE OF SEMICONDUCTORS, CHINESE ACADEMY OF SCIENCES, Beijing, CN;
Primary Examiner:
Int. Cl.
CPC ...
B82Y 30/00 (2011.01); B01J 21/02 (2006.01); B01J 23/50 (2006.01); B01J 23/52 (2006.01); B01J 27/24 (2006.01); B01J 35/23 (2024.01); B01J 35/33 (2024.01); B01J 35/39 (2024.01); B01J 37/02 (2006.01); B01J 37/34 (2006.01); C01B 3/04 (2006.01); C23C 16/30 (2006.01); C23C 28/00 (2006.01); C25D 7/12 (2006.01); C30B 25/18 (2006.01); C30B 29/40 (2006.01); H10F 71/00 (2025.01); H10F 77/124 (2025.01); H10F 77/40 (2025.01); H10H 20/01 (2025.01); H10H 20/825 (2025.01); H10H 20/855 (2025.01); B82Y 15/00 (2011.01); B82Y 20/00 (2011.01); B82Y 40/00 (2011.01); C25D 3/44 (2006.01); C25D 3/46 (2006.01); C25D 3/48 (2006.01);
U.S. Cl.
CPC ...
B01J 27/24 (2013.01); B01J 21/02 (2013.01); B01J 23/50 (2013.01); B01J 23/52 (2013.01); B01J 35/23 (2024.01); B01J 35/33 (2024.01); B01J 35/39 (2024.01); B01J 37/0207 (2013.01); B01J 37/0215 (2013.01); B01J 37/0242 (2013.01); B01J 37/348 (2013.01); C01B 3/042 (2013.01); C23C 16/303 (2013.01); C23C 28/32 (2013.01); C23C 28/34 (2013.01); C25D 7/12 (2013.01); C30B 25/183 (2013.01); C30B 29/403 (2013.01); H10F 71/1274 (2025.01); H10F 77/12485 (2025.01); H10F 77/413 (2025.01); H10H 20/0137 (2025.01); H10H 20/825 (2025.01); H10H 20/855 (2025.01); B82Y 15/00 (2013.01); B82Y 20/00 (2013.01); B82Y 30/00 (2013.01); B82Y 40/00 (2013.01); C25D 3/44 (2013.01); C25D 3/46 (2013.01); C25D 3/48 (2013.01);
Abstract
Provided are a semiconductor material based on metal nanowires and a porous nitride, and a preparation method thereof. The semiconductor material includes: a substrate; a buffer layer formed on the substrate; and a composite material layer formed on the buffer layer the composite material layer includes: a transverse porous nitride template layer; and a plurality of metal nanowires filled in pores of the transverse porous nitride template layer.