The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 24, 2025

Filed:

Apr. 24, 2023
Applicant:

SK Hynix Inc., Icheon, KR;

Inventor:

Woo Tae Lee, Icheon, KR;

Assignee:

SK hynix Inc., Icheon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01); H10N 70/00 (2023.01);
U.S. Cl.
CPC ...
H10N 70/826 (2023.02); G11C 13/0026 (2013.01); G11C 13/0028 (2013.01); H10N 70/063 (2023.02); H10N 70/066 (2023.02);
Abstract

A semiconductor device and a method for fabricating the same may be provided. The semiconductor device may include: a first semiconductor structure including a substrate, a plurality of first word lines, a plurality of first bit lines, and a plurality of first memory cells respectively disposed in intersection regions between the first word lines and the first bit lines; and a second semiconductor structure including a plurality of second bit lines disposed over the first bit lines and respectively contacting the first bit lines, a plurality of second word lines, and a plurality of second memory cells respectively disposed in intersection regions between the second word lines and the second bit lines, wherein a first bit line and a corresponding second bit line form a metal-to-metal bonding.


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