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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12342710 B1

PDFFull Text
Date of Patent:
Jun. 24, 2025

Filed:

Oct. 07, 2019

Method of forming a perovskite film for an optoelectronic device

Applicant:

Commonwealth Scientific and Industrial Research Organisation, Australian Capital Territory, AU;

Inventors:

Mei Gao, Glen Waverley, AU;

Chuantian Zuo, Beijing, CN;

Doojin Vak, Noble Park North, AU;

Assignee:

COMMONWEALTH SCIENTIFIC AND INDUSTRIAL RESEARCH ORGANISATION, Australian Capital Territory, AU;

Attorney:

Foley & Lardner LLP

Primary Examiner:

Peniel M Gumedzoe

Int. Cl.
CPC ...
H01G 9/00 (2006.01); H01G 9/20 (2006.01); H01L 51/00 (2006.01); H01L 51/42 (2006.01); H10K 30/30 (2023.01); H10K 71/12 (2023.01); H10K 71/40 (2023.01); H10K 85/50 (2023.01); H10K 30/10 (2023.01); H10K 30/50 (2023.01); H10K 85/10 (2023.01); H10K 85/20 (2023.01); H10K 85/30 (2023.01);
U.S. Cl.
CPC ...
H10K 71/12 (2023.02); H01G 9/0036 (2013.01); H01G 9/2009 (2013.01); H10K 30/30 (2023.02); H10K 71/40 (2023.02); H10K 85/50 (2023.02); H10K 30/10 (2023.02); H10K 30/50 (2023.02); H10K 85/111 (2023.02); H10K 85/1135 (2023.02); H10K 85/215 (2023.02); H10K 85/30 (2023.02);
Abstract

The invention provides a method of forming a perovskite film for an optoelectronic device, the method comprising: applying a perovskite precursor solution to at least one part of a hydrophilic region of a substrate, wherein the hydrophilic region is bounded by a hydrophobic boundary; allowing the perovskite precursor solution to spread over the hydrophilic region, wherein the perovskite precursor solution is retained within the hydrophilic region by at least a portion of the hydrophobic boundary; and drying the perovskite precursor solution to form a perovskite film on the hydrophilic region.

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