The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 24, 2025

Filed:

Jun. 14, 2024
Applicants:

Stmicroelectronics (Research & Development) Limited, Marlow, GB;

Stmicroelectronics (Crolles 2) Sas, Crolles, FR;

Inventors:

Raul Andres Bianchi, Myans, FR;

Marios Barlas, Grenoble, FR;

Alexandre Lopez, Edinburgh, GB;

Bastien Mamdy, Le Versoud, FR;

Bruce Rae, Edinburgh, GB;

Isobel Nicholson, Edinburgh, GB;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10F 39/00 (2025.01); G02B 5/18 (2006.01); H10F 39/12 (2025.01);
U.S. Cl.
CPC ...
H10F 39/8023 (2025.01); H10F 39/805 (2025.01); G02B 5/18 (2013.01); G02B 5/1814 (2013.01); G02B 5/1819 (2013.01); G02B 5/1828 (2013.01); G02B 5/1842 (2013.01); H10F 39/199 (2025.01); H10F 39/8027 (2025.01); H10F 39/8033 (2025.01); H10F 39/807 (2025.01);
Abstract

The present disclosure relates to a pixel comprising: a photodiode comprising a portion of a substrate of a semiconductor material, extending vertically from a first face of the substrate to a second face of the substrate configured to receive light; a layer of a first material covering each of the lateral surfaces of the portion; a layer of a second material covering the portion on the side of the first face, first and second material having refractive indexes lower than that of the semiconductor material; and a diffractive structure disposed on a face of the photodiode on the side of the second face.


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