The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2025
Filed:
Nov. 16, 2020
Himax Imaging Limited, Tainan, TW;
Youngchul Sohn, Tainan, TW;
Kihong Kim, Tainan, TW;
Himax Imaging Limited, Tainan, TW;
Abstract
A CMOS image sensor includes: a substrate containing a potential well stack including: a first p-well, a first n-well disposed below the first p-well, a second p-well disposed below the first n-well, a second n-well disposed below the second p-well, and a third p-well disposed below the second n-well, wherein a first photodiode is formed at the junction between the first p-well and first n-well, a second photodiode is formed at the junction between the first n-well and second p-well, a third photodiode is formed at the junction between the second p-well and the second n-well, and a fourth photodiode is formed at the junction between the second n-well and the third p-well, and each photodiode is disposed at a different respective depth within the substrate; and a plurality of active pixel sensors for converting light received by the photodiodes into electrical charge.