The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2025
Filed:
Aug. 29, 2022
Kabushiki Kaisha Toshiba, Tokyo, JP;
Teruyuki Ohashi, Kawasaki, JP;
Hiroshi Kono, Himeji, JP;
Shunsuke Asaba, Himeji, JP;
Takahiro Ogata, Kobe, JP;
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
Abstract
A semiconductor device of an embodiment includes a transistor region and a diode region. The transistor region includes an n-type first silicon carbide region having a first portion in contact with a first plane, a p-type second silicon carbide region, an n-type third silicon carbide region, a first electrode in contact with the first portion, the second silicon carbide region, and the third silicon carbide region, a second electrode in contact with a second plane, and a gate electrode. The diode region includes an n-type first silicon carbide region having a second portion in contact with the first plane, a p-type fourth silicon carbide region, a first electrode in contact with the second portion and the fourth silicon carbide region, and a second electrode. An occupied area per unit area of the fourth silicon carbide region is larger than an occupied area per unit area of the second silicon carbide region. The first diode region is provided between a first transistor region and a second transistor region.