The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2025
Filed:
Dec. 13, 2022
Applicant:
Renesas Electronics Corporation, Tokyo, JP;
Inventors:
Seiji Hirabayashi, Tokyo, JP;
Yusuke Ojima, Tokyo, JP;
Assignee:
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/66 (2025.01); H01L 25/07 (2006.01); H10D 64/00 (2025.01);
U.S. Cl.
CPC ...
H10D 30/669 (2025.01); H01L 25/074 (2013.01); H10D 30/668 (2025.01); H10D 64/117 (2025.01);
Abstract
A performance of a semiconductor device including a main MOSFET and a sensing MOSFET having a double-gate structure including a gate electrode and a field plate electrode inside a trench is improved. A main MOSFET including a gate electrode and a field plate electrode inside a second trench and a sensing MOSFET for electric-current detection including a gate electrode and a field plate electrode inside a fourth trench are surrounded by different termination rings, respectively.