The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2025
Filed:
Jul. 11, 2022
Applicant:
Nanya Technology Corporation, New Taipei, TW;
Inventor:
Jhen-Yu Tsai, Kaohsiung, TW;
Assignee:
NANYA TECHNOLOGY CORPORATION, New Taipei, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 30/66 (2025.01); H10D 64/01 (2025.01); H10D 64/27 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01);
U.S. Cl.
CPC ...
H10D 30/668 (2025.01); H10D 64/017 (2025.01); H10D 64/513 (2025.01); H10D 84/0135 (2025.01); H10D 84/038 (2025.01);
Abstract
The present disclosure provides a method of manufacturing a semiconductor device. The method includes forming a first trench in a substrate, disposing a first gate electrode in the first trench, and disposing a dummy gate electrode on the first gate electrode in the first trench. The method also includes removing the dummy gate electrode from the first gate electrode and forming a first doped region in the first gate electrode.